First principles study of As-vacancy interaction and the ring mechanism of diffusion in the presence of Ge in SiJINYU ZHANG; ASHIZAWA, Yoshio; OKA, Hideki et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 20, pp 4879-4886, issn 0953-8984, 8 p.Article

Nitrogen-doped zirconia : A comparison with cation stabilized zirconiaLEE, Jong-Sook; LERCH, Martin; MAIER, Joachim et al.Journal of solid state chemistry (Print). 2006, Vol 179, Num 1, pp 270-277, issn 0022-4596, 8 p.Article

The role of transition metal impurities and oxygen vacancies in the formation of ferromagnetism in Co-doped TiO2ANISIMOV, V. I; KOROTIN, M. A; NEKRASOV, I. A et al.Journal of physics. Condensed matter (Print). 2006, Vol 18, Num 5, pp 1695-1704, issn 0953-8984, 10 p.Article

Comparison of Monte Carlo simulations and macroscopic theories of diffusion in systems with non-ideal sources and sinks for vacanciesZENISEK, J; SVOBODA, J; FISCHER, F. D et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 21, pp 2363-2389, issn 1478-6435, 27 p.Article

High-resolution EELS study of the vacancy-doped metal/insulator system, Nd_1-xTiO₃, x = 0 to 0.33SEFAT, Athena S; AMOW, Gisele; WU, Meng-Yue et al.Journal of solid state chemistry (Print). 2005, Vol 178, Num 4, pp 1008-1016, issn 0022-4596, 9 p.Article

The function of interstices in cubic unit cellsRUHNOW, M.Philosophical magazine (2003. Print). 2005, Vol 85, Num 17, pp 1865-1899, issn 1478-6435, 35 p.Article

Molecular dynamics simulations of phase formation and stability in the Al(Ni) system under irradiationCUENAT, A; GOTTHARDT, R; SCHAEUBLIN, R et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 4-7, pp 737-743, issn 1478-6435, 7 p.Conference Paper

On the effect of dose rate on irradiation hardening of RPV steelsODETTE, G. R; YAMAMOTO, T; KLINGENSMITH, D et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 4-7, pp 779-797, issn 1478-6435, 19 p.Conference Paper

Diffusion of interstitial muonium, Mu_T, in a ¹³C diamondGXAWU, D; MACHI, I. Z; CONNELL, S. H et al.Diamond and related materials. 2005, Vol 14, Num 3-7, pp 375-379, issn 0925-9635, 5 p.Conference Paper

Point defects and transport mechanisms in transparent conducting oxides of intermediate conductivityINGRAM, B. J; BENONI, M. I; POEPPELMEIER, K. R et al.Thin solid films. 2005, Vol 486, Num 1-2, pp 86-93, issn 0040-6090, 8 p.Conference Paper

Replacement collision and focuson sequences revisited by full molecular dynamics and its binary collision approximationBECQUART, C. S; SOUIDI, A; HOU, M et al.Philosophical magazine (2003. Print). 2005, Vol 85, Num 4-7, pp 409-415, issn 1478-6435, 7 p.Conference Paper

Vacancy motion in rare-earth-deficient R_1-xNi₂ laves phases observed by perturbed angular correlation spectroscopyFORKER, M; DE LA PRESA, P; MÜLLER, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 1, pp 014302.1-014302.12, issn 1098-0121Article

High temperature vacancy studies of icosahedral Zn₆₅Mg₂₅Er₁₀ quasicrystalYE, F; SPRENGEL, W; ZHANG, X. Y et al.Journal of physics. Condensed matter (Print). 2004, Vol 16, Num 9, pp 1531-1537, issn 0953-8984, 7 p.Article

Mobility of interstitial oxygen in scandium by anelastic spectroscopyTREQUATTRINI, F; CORDERO, F; CANNELLI, G et al.Solid state communications. 2004, Vol 129, Num 4, pp 217-220, issn 0038-1098, 4 p.Article

Orientation kinetics of the hexavacancies: V6 (B480) in siliconKAMINSKII, A. S.Solid state communications. 2004, Vol 130, Num 11, pp 723-727, issn 0038-1098, 5 p.Article

Positron annihilation investigation of electron irradiation-produced defects in 6H-SiCDANNEFAER, S; KERR, D.Diamond and related materials. 2004, Vol 13, Num 1, pp 157-165, issn 0925-9635, 9 p.Article

Self-assembly of point defects into clusters and defect-free regions: a simulation study of higher-valent substituted ferroelectric perovskitesZHANG, R; LI, J. F; VIEHLAND, D et al.Computational materials science. 2004, Vol 29, Num 1, pp 67-75, issn 0927-0256, 9 p.Article

Silicon diffusion in molybdenum disilicide: correlation effectsDIVINSKI, Sergiy; SALAMON, Marcel; MEHRER, Helmut et al.Philosophical magazine (2003. Print). 2004, Vol 84, Num 8, pp 757-772, issn 1478-6435, 16 p.Article

The OH^- absorption spectra of low doped lithium niobate crystalsYONGFA KONG; WANLIN ZHANG; JINGJUN XU et al.Infrared physics & technology. 2004, Vol 45, Num 4, pp 281-289, issn 1350-4495, 9 p.Article

Identification of Ga-interstitial defects in GaN_yP_1-y and Al_xGa_1-xN_yP_1-yTHINH, N. Q; VORONA, I. P; MOON, S et al.Physical review B. Condensed matter and materials physics. 2004, Vol 70, Num 12, pp 121201.1-121201.4, issn 1098-0121Article

Point defect study from low photoluminescence of the CdIn₂S₄ films grown by hot wall epitaxy methodYOU, S. H; HONG, K. J; JEONG, T. S et al.Journal of crystal growth. 2004, Vol 271, Num 3-4, pp 391-397, issn 0022-0248, 7 p.Article

Depth distribution of disorder and cavities in high dose helium implanted silicon characterized by spectroscopic ellipsometryPETRIK, P; CAYREL, F; FRIED, M et al.Thin solid films. 2004, Vol 455-56, pp 344-348, issn 0040-6090, 5 p.Conference Paper

Observation of dynamic nanostructural and nanochemical changes in ceria-based catalysts during in-situ reductionSHARMA, R; CROZIER, P. A; KANG, Z. C et al.Philosophical magazine (2003. Print). 2004, Vol 84, Num 25-26, pp 2731-2747, issn 1478-6435, 17 p.Conference Paper

Details of a theoretical model for electronic structure of the diamond vacanciesHEIDARI SAANI, M; VESAGHI, M. A; ESFARJANI, K et al.Diamond and related materials. 2004, Vol 13, Num 11-12, pp 2125-2130, issn 0925-9635, 6 p.Conference Paper

Deformation behaviour induced by point defects near a Cu(0 0 1) surfaceSAID-ETTAOUSSI, M; JIMENEZ-SAEZ, J. C; PEREZ-MARTIN, A. M. C et al.Applied surface science. 2004, Vol 238, Num 1-4, pp 249-253, issn 0169-4332, 5 p.Conference Paper